Low-cost SOI-based level-shift gate driver for high-voltage and >1MHz switching in GaN applications

Inhalt:
This paper presents the design, testing, and performance evaluation of a low-cost Silicon on Insulator (SOI)-based level-shift gate driver for high-voltage and high-frequency switching applications. The gate driver is specifically designed to drive Infineon's GIT GaN transistors in a half-bridge configuration, operating at voltages up to 400V and switching frequencies exceeding 1 MHz. The thermal performance of the gate driver is evaluated through extensive testing, demonstrating its effectiveness and suitability for high-voltage, highfrequency GaN applications. The results confirm that the proposed SOI-based gate driver can meet the challenges of gate driver loss, offering a cost-effective solution for next-generation power electronics.