Comparative Analysis of Gate Driver Control Topologies: Effects on SiC MOSFET Switching Performance in Half-Bridge Configurations

Inhalt:
The efficiency and reliability of half-bridge power converters using silicon carbide (SiC) MOSFETs are influenced by turn-on Eon and turn-off Eoff energy losses. This paper explores how voltage-controlled and current-controlled gate driver topologies affect the switching characteristics of power devices in half-bridge configurations. An experimental study is conducted to analyze the switching performance and thermal characteristics of the SiC MOSFET. The findings highlight the trade-offs of each topology and offer insights into their suitability for high-frequency and high-power applications at elevated temperatures. The study aims to help engineers select the most suitable gate driver strategies to minimize Eon and Eoff losses and enhance the performance and reliability of half-bridge systems.