Application of Cu Sintering Technology in High-Power-Density Double-Sided Cooling SiC Module

Inhalt:
Owing to its cost-effectiveness, outstanding electrical and thermal properties, and robust thermal reliability, Cu sintering paste is deemed an ideal interconnection material for wide bandgap semiconductors. However, achieving efficient sintering of Cu paste typically necessitates the use of pressure, reducing atmospheres, and elevated temperatures. Unfortunately, these stringent conditions have significantly restricted the broader application of Cu sintering paste in the interconnection of high-powerdensity devices. To promote the application of Cu paste in high-power-density device interconnections, this paper reports a formic acid-assisted pressureless Cu sintering process based on a self-developed Cu paste. Sintering at 210 - 300deg C, the porosity is 10% - 20%, and the shear strength can reach 36 - 49 MPa. Based on this process, a double-sided cooling (DSC) SiC module with a rating of 1200V/800A is designed and fabricated at 240deg C. Experimental results show that, the porosity is 15%, and the shear strength is 40MPa. In addition, double-pulse testing results indicate that the DSC power module fabricated exhibits excellent dynamic electrical performance.