Influence of the Junction Temperature on the Dynamic Gate Bias Test of SiC MOSFETs

Inhalt:
SiC MOSFETs are important components in electric power conversions of many energy applications. But the devices showed gate switching instabilities in extensive high-frequency operations, which may result in an unexpected influence on the applications. That makes it one of the key research topics of SiC MOSFETs reliability recently. Researchers have performed many different tests to investigate the influence factors on the dynamic gate bias effects. Frequency, duty ratio, voltage range and overshoots have been discovered significant impacts on the lifetime of SiC MOSFETs in dynamic gates bias test (DGS). Here, we designed an experiment to find the influence of junction temperature of SiC MOSFETs on the dynamic gate bias test, which showed an insignificant effect on the lifetime of the devices in the DGS test.