A new IGCT Platform for up to 8.5 kV with unprecedented turn-off current capability
Konferenz: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.09.2025-26.09.2025 in Shanghai, China
doi:10.30420/566583037
Tagungsband: PCIM Asia Shanghai Conference 2025
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Wikstroem, Tobias; Vemulapati, Umamaheswara; Ptakova, Zuzana; Meier, Urban; Frecker, Mark; Stiasny, Thomas; Winter, Christian
Inhalt:
High power semiconductor applications evolve into ever higher power ratings. At the same time there is increasing pressure on cost. High voltage IGCT semiconductors enable to design these applications significantly more cost efficient e.g. by reducing the number of series connected multilevel cells in a MMC topology. The new device platform applies the latest IGCT- and Fast Recovery Diode technologies (for Reverse Conducting devices) what results in unprecedented current capability at high voltage ratings 6.5 - 8.5 kV. In addition, the IGCT application circuit offers significant advantages in respect to converter protection e.g. fault current limitation, SCFM (Short Circuit Failure Mode) and case rupture. In this paper we present the design concept, the characteristics of selected cornerstones of the platform, and assess their application potential by scaling.