Enhanced 900 A 1700 V ED Module with Micropattern Trench IGBT for High Performance and Reliability
Konferenz: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.09.2025-26.09.2025 in Shanghai, China
doi:10.30420/566583038
Tagungsband: PCIM Asia Shanghai Conference 2025
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Guillemin, Remi; Schneider, Nick; Schnell, Raffael; Matthias, Sven; Toker, Chantal; Knoll, Lars; Gao, Ben; Wang, Ian
Inhalt:
This paper introduces a 900A, 1700 V ED-Type module featuring a micropattern trench IGBT and an innovative design that enables high current density and improved performance. Optimized substrate and module designs maximize the current capability, achieving an outstanding packaging resistance of 0.7 mOmega and stray inductance of 16 nH. An advanced combination of materials and fine-tuned processes were implemented, resulting in enhanced module reliability. The newly developed IGBT and diode chipset incorporate the latest advancements in chip technology to minimize conduction and dynamic losses, maintaining excellent switching softness. Additionally, the chipset offers extreme ruggedness and a wide safe operating area.