Next Generation 1200V IGBT and Diode Technology for Automotive Drivetrain Applications
Konferenz: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.09.2025-26.09.2025 in Shanghai, China
doi:10.30420/566583039
Tagungsband: PCIM Asia Shanghai Conference 2025
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Beckmann, Alexander; Dainese, Matteo; Fiebig, Matthias; Spenke, Rene; Wu, Jiong
Inhalt:
The shift to higher battery voltages in electric vehicles (600–900V) is driving demand for 1200V power semiconductors. Leveraging Micro Pattern Trench (MPT) technology, Infineon’s latest 1200V IGBT and diode technologies achieve a 22% reduction in inverter losses and a power density increase of up to 34% compared to the previous generation. These advancements are enabled by improved conduction performance, faster switching, and an increased maximum junction temperature of 185deg C. To address diverse requirements, both a chipset (IGBT + diode) and a reverse-conducting (RC)-IGBT variant are offered, offering flexibility for next-generation EV powertrain systems.