Full SiC SLIMDIP for High Efficiency Applications

Konferenz: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.09.2025-26.09.2025 in Shanghai, China

doi:10.30420/566583042

Tagungsband: PCIM Asia Shanghai Conference 2025

Seiten: 6Sprache: EnglischTyp: PDF

Autoren:
Takakura, Kazuki; Terado, Yuki; Omagari, Yuya; Takao, Toma; Kai, Jiang; Wang, XiaoLing; Goto, Akiko; Nguchi, Koichiro

Inhalt:
In recent years, the demand for power semiconductors, which efficiently convert electricity, has been expanding as key devices contributing to the realization of a decarbonized society. As energy-saving regulations tighten, the demand for efficient power semiconductor modules is growing. Full SiC SLIMDIP which features SiC MOSFETs, offering significant improvements in energy efficiency and compatibility with existing SLIMDIP series. Full SiC SLIMDIP achieves up to approximately 80% loss reduction across various current ranges. This development aims to contribute broadly to efficiency improvements in various applications. This paper introduces a new 600V / 15A SiC SLIMDIP equipped with SiC MOSFETs.