Dynamic On-Resistance Characterization of GaN HEMTs under High Temperature Using Multigroup Double Pulse Test

Inhalt:
During normal operation of GaN-based converters, GaN devices maintain high junction temperatures (TJ) while being affected by dynamic on-resistance (RON). Therefore, evaluating the dynamic RON of GaN devices under high-temperature conditions is critical. In this paper, an external heating-based test bench was established. Utilizing steady-state thermal resistance models of components, the TJ of the device under test (DUT) was indirectly acquired by monitoring its case temperature (TC). Using a multi-group double-pulse testing (DPT) method, the dynamic RON of two commercial GaN devices with different structures was measured under varying TJ. Concurrently, the steady-state dynamic RON values were recorded. Device A exhibits a minimum in RON versus TJ, whereas Device B shows insignificant change in RON with TJ variation.