New generation Ultra high power semiconductors for VSC-HVDC applications
Konferenz: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.09.2025-26.09.2025 in Shanghai, China
doi:10.30420/566583068
Tagungsband: PCIM Asia Shanghai Conference 2025
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Tsyplakov, E.; Guillon, D.; Vobecky, J.; Santolaria, L.; Maleki, M.; Beyer, H.; Roesch, A.; Winter, C.; Chen, M.
Inhalt:
Recent development efforts have targeted a further increase in single device current capability of IGBT (Insulated Gate Bipolar Transistor) and fast recovery diode. As a result, a 6250A IGBT press-pack and FRD devices have been realized, both making new record in power rating [1] . The module features a new generation of planar IGBT device optimized for lower on-state losses leading to higher current capability and lower collector-emitter leakage allowing higher temperature operation. The new bipolar fast recovery diode available with both standard and enhanced case non-rupture current capability brings more system design freedom and robustness. In this paper we report the recent developments, present the device design concept and characteristic and assess their application potential through simulation 10 GW VSC-HVDC applications.