Introducing a new 650 V SOI Gate Driver with Improved DESAT Protection

Inhalt:
1ED2127 is the latest gate driver designed with Infineon’s 2nd-generation high-voltage silicon-on-insulator (SOI) technology. Compared with existing parts, 1ED2127 can deliver 3x faster propagation delay (55 ns), and much higher output current rated at 4 A typical. Furthermore, an improved DESAT circuit can detect a short circuit event and turn off the power switch as fast as 1 us, while achieve better noise immunity at the same time. These features make it a cost-effective solution to drive SiC MOSET in high switching frequency applications.