Increased Power Density and Lifetime of Thin Automotive Inverter Chips through Cu-Bonding

Inhalt:
This paper presents a comprehensive comparison between a novel copper-wire-based module and recently released aluminum-wire-based power modules, utilizing the 750 V EDT3 IGBT/ Diode technology. The investigation includes the impact of copper-based interconnects on the module’s thermal robustness and maximum output power. The same module platform and chip technology is employed for both interconnects, with modifications restricted solely to the front metallization stack of the chip. The results demonstrate that the introduction of copper-based interconnects on the front side significantly enhances the module’s ability to withstand elevated chip and module temperatures, thereby enabling substantial improvements in maximum power capability without compromising reliability and robustness. This study provides insights into the thermal performance of copper-wire and aluminum-wire based power modules, with implications for the design and development of high-power electronic systems.