Inductor-Induced Oscillations in SiC Device Characterization: A Comparative Study

Inhalt:
Dynamic characterization of Silicon Carbide (SiC) devices in test circuits often encounters inductorinduced oscillations, which are the culprits of distorting measurements and impairing device performance. These oscillations arise from the interplay between inductors and parasitic capacitances inherent in the circuit, creating resonance effects that challenge stability. This paper delves into root causes of oscillations through analysis of the effect of parasitic capacitance on different inductor types—multilayer air core, single-layer air core, and toroidal coils. Our objectives are threefold—proposing a comparative analysis of inductor performance, validating these findings and quantifying resonance effects due to the parasitic capacitance by circuit modelling.