Hardware Design of Cascode GaN Module for Education and Research

Inhalt:
Gallium Nitride (GaN) devices offer superior switching speed and efficiency, enabling high-frequency and compact power conversion systems. However, their fast switching transients make them highly sensitive to parasitic inductances and electromagnetic interference (EMI), which requires careful hardware design. This paper presents the hardware development of a cascode GaN half-bridge module featuring an optimized PCB layout and gate driver design. Double Pulse Test (DPT) is conducted to evaluate switching dynamics and extract parasitic parameters. An RCD snubber network is implemented to suppress voltage overshoot and ringing, achieving a 1.73 times reduction in overshoot. Experimental validation confirms stable operation and demonstrates the effectiveness of the proposed design, offering practical insights for education and research on the development of GaN-based power converters.