3.3kV 2in1 High Current Capacity Si-IGBT and SiC-MOSFET Power Modules with Sintered Copper Die Attach Technology

Inhalt:
To achieve longer power cycling lifetimes and higher current capacity in semiconductor power modules, sintered copper die attach and improved bond wire joints on the die were implemented in both 3.3 kV 2in1 Si-IGBT and SiC-MOSFET power modules designed for railway traction applications. Thermal impedance components to the die attach were reduced by approximately half compared to conventional solder modules. The power cycling lifetime of the Si-IGBT module increased by more than 15 to 50 times, exceeding three million cycles. For the SiC-MOSFET module, an increase of at least 10 times was expected. These improvements, which allow a higher maximum junction temperature and a lower thermal resistance, enabled higher rated current capacities of 800 A for the Si-IGBT and 1000 A for the SiCMOSFET power modules, respectively.