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Thermal Transient Measurement Methods for Cascode Power Devices to Determine Junction to Package Thermal Resistance

Konferenz: PCIM Asia New Delhi - The Agent of Change for the Indian Power Electronics Industry
09.12.2025-10.12.2025 in Dr. Ambedkar International Centre, New Delhi, India

doi:10.30420/566677032

Tagungsband: PCIM Asia New Delhi

Seiten: 9Sprache: EnglischTyp: PDF

Autoren:
Badalawa, Wasanthamala; Yoshitaka, Aoki; Hara, Tomoaki

Inhalt:
Cascode power devices are commonly utilised in industrial environments to optimise operational efficiency. Robust thermal management is critical for ensuring sustained, high-level performance. This paper introduces three types of thermal transient measurement methods for cascode power devices based on the GaN HEMT. The thetajc values obtained from each method varied, however each method was valid and the reasons for these variations were investigated. Their validity was discussed based on simulation model calibration. The thetajc significantly differed due to differences in the heating amounts of the HEMT and MOSFET in each thermal transient measurement method.