A General Model Translation Approach for Vertical Power MOSFETs Based on BSIM3 Model

Konferenz: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
24.03.2020 - 26.03.2020 in Berlin, Deutschland

Tagungsband: ETG-Fb. 161: CIPS 2020

Seiten: 6Sprache: EnglischTyp: PDF

Yan, Lixi; Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems, University of Stuttgart, Stuttgart, Germany)

This work presents the development of a general model translation approach, which aims at modeling and simulation of vertical power MOSFETs. A subcircuit based on the industry-standard CMOS model BSIM3 is used to represent the performance of power MOSFETs. Considering the structural differences between logical CMOS and power devices, some conventional CMOS parameters are deactivated and some special extensional settings are developed to describe the specific structure of power devices. Basis for the parameter extraction are transistor characteristics obtained from the circuit simulation of original vendor models, i.e. measurements are replaced by flexible simulations and vendor models are translated to extended BSIM3. A suitable parameter extraction procedure is defined to efficiently optimize the model parameters. The parameter optimization result is analyzed and a modeling improvement strategy is given.