Development of High Reliability Power SiC Module Platform Packag-ing for Low Carbon Vehicles

Konferenz: CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems
15.03.2022 - 17.03.2022 in Berlin, Germany

Tagungsband: ETG-Fb. 165: CIPS 2022

Seiten: 4Sprache: EnglischTyp: PDF

Autoren:
Wang, Yangang; Harris, Anne; Li, Xiang; Morshed, Muhammad (Power Semiconductor R&D Centre, Dynex Semiconductor Ltd, Lincoln, Uk)
Liu, Guoyou (State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan, China)

Inhalt:
It is generally believed that the power semiconductor device is the most critical component of the traction inverter system in Low Carbon Vehicles (LCV). The key technical specifications of the system such as power density, switching frequency, conversion efficiency, operating and maximum junction temperatures and reliability, as well as the overall volume, weight and cost, are all determined to a large extent by the power semiconductor devices. With the advantages of material and device structure, SiC MOSFET is regarded as the ideal device for LCV power systems. In this work, development of a high power density and high reliability SiC MOSFET power module platform packaging is presented in terms of design and simulation of mechanical, electrical and thermal, and packaging process design for high reliability. A main loop inductance of 6.4nH, junction to case thermal resistance of 0.07K/W, enhancement reliability by ad-vanced joining and interconnection technologies are achieved. The module prototype is assembled and tested as an example of the platform module based on which the series of module with different power, voltage and current could be developed in short term.