PCB-Embedded Packaging for Ultra-Fast Switching of SiC MOSFETs

Konferenz: CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems
15.03.2022 - 17.03.2022 in Berlin, Germany

Tagungsband: ETG-Fb. 165: CIPS 2022

Seiten: 7Sprache: EnglischTyp: PDF

Autoren:
Risch, Raffael; Biela, Juergen (Laboratory for High Power Electronic Systems, ETH Zurich, Switzerland)

Inhalt:
In high-voltage applications requiring very fast switching transients, as for example nanosecond pulse applications, SiC MOSFETs are an interesting switch technology due to their superior switching performance and relatively high breakdown voltage. However, conventional packages relying on bond wires need to be replaced by planar packages to reduce the stray inductances and to exploit the full switching speed potential of SiC MOSFETs. This paper compares a low-inductive PCB-package to a standard wire-bonded package in terms of package inductances, achievable switching speed, and thermal management.