High Power SiC MOSFET Power Stack Reference Design for Multi- Megawatt Converter Applications

Inhalt:
This paper presents a variety of design considerations on how to fully utilize a SiC MOSFET power module in a highpower converter with two parallel modules per phase. After giving an overview on some application-specific requirements and how the power module addresses them, a practical design of a power stack demonstrator is described in detail. With a focus on high power density combined with an easy assembly, the fully operable converter system reaches a power rating of 3,5 MVA with just two power modules per phase. Following this reference power stack design, a full-scale prototype converter is equipped with the high power SiC MOSFET module, whereas comparative measurements in relation to state-of-the-art IGBT modules are presented. The measurement results under full-load conditions emphasize the enormous potential of the SiC MOSFET modules for the application in multi-megawatt converter applications.