MOVPE growth of lattice matched GaxIn(1-x)AsyP(1-y) for heterojunction bipolar transistors in 6G applications

Inhalt:
This work reports on the MOVPE growth of Ga(x)In(1-x)As(y)P(1-y) layers lattice matched to InP with band gaps between 0.76 eV (InGaAs) and 1.35 eV (InP) for application in the base collector grading in DHBT layers utilizing a closed-coupled showerhead reactor. By maintaining constant V/III ratio and total precursor flow along with sufficiently high growth rate, good composition control was observed and phase-separation could be avoided across the targeted band gap range. A linear calibration curve was obtained describing As incorporation efficiency from the gas phase into the solid.