Sophisticated 3D Patterning by E-Beam and i-line Grayscale Lithography and followed RIE and DRIE structure transfer to enable future photonic, NEMS and MEMS application fields

Konferenz: MikroSystemTechnik KONGRESS 2025 - Mikroelektronik/Mikrosystemtechnik und ihre Anwendungen – Nachhaltigkeit und Technologiesouveränität
27.10.2025-29.10.2025 in Duisburg, Germany

doi:10.30420/456614077

Tagungsband: MikroSystemTechnik Kongress 2025

Seiten: 4Sprache: EnglischTyp: PDF

Autoren:
Schermer, Sebastian; Helke, Christian; Gottwald, Markus; Kohlschreiber, Pia; Bonitz, Jens; Haase, Micha; Umlauf, Georg; Hiller, Karla; Reuter, Danny

Inhalt:
The increasing demand for sophisticated patterning technologies for 2.5D and 3D structures, such as micro lens arrays (MLAs), photonic integrated circuits (PICs), and MEMS, is driven by their critical roles in modern optical and electronic applications. MLAs, in particular, are essential for the integration of micro-LED arrays, enhancing device performance through precise light manipulation and improved optical efficiency. This paper investigates the use of grayscale lithography, focusing on electron beam (e-beam) and i-line stepper lithography, to efficiently fabricate these intricate structures while addressing the limitations associated with each method.