Circuit Protection with SiC FETs in dual-gate configuration

Konferenz: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.09.2021 - 11.09.2021 in Shenzhen, China

Tagungsband: PCIM Asia 2021

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Bhalla, Anup; Li, Xueqing; Dodge, Jonathan (United Silicon Carbide Inc., Princeton, NJ, USA)

Inhalt:
Interest in solid-state circuit breakers and solid-state power controllers has grown rapidly in recent years. SiC JFETs have long been considered ideal devices for this application, given their ability to have low on-state resistance at high voltage ratings, without compromising their ability to limit current when needed. We examine the use of normally-off SiC FETs in a dual gate configuration to simplify the development of high current DC and AC circuit breakers.