Guangzhou Guangya Messe Frankfurt Co Ltd. (Hrsg.)

PCIM Asia 2021

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 9 – 11 September 2021, Shenzhen, China

2021, 231 Seiten, 140 x 124 mm, Slimlinebox, CD-Rom
ISBN 978-3-8007-5620-9, E-Book: ISBN 978-3-8007-5621-6
Persönliche VDE-Mitglieder erhalten auf diesen Titel 10% Rabatt

Inhaltsverzeichnis Vorwort

Researchers, application engineers and experts from industry and academia will meet to discuss and exchange ideas on future digital energy systems, advanced smart power converters, energy efficiency by applying the next generation of power devices, new materials for chip interfacing technologies and proper power module designs considering all parasitcs including extended lifetime for power devices. I am very happy that this year we are having an outstanding high level technical program in complimentary to 3 leading experts for keynote presentations, one tutorial, one special session on multilevel topologies in addition to one dedicated session on selected topics from the PCIM Europe digital days 2021. Companies are eager to utilize the PCIM Asia for launching new products in the market and leading scientists are presenting their latest research achievements for power electronic components, building blocks and systems. Decision makers from companies use the PCIM Asia platform to generate new market segments and trigger future research directions. The driving targets for power conversion systems are weight-, volume- and cost reduction along with an increase in life-time.

Product innovations will be a focus at PCIM Asia Conference this year
The new generation of wide bandgap devices are covering a wide power range and showing a high maturity level in terms of ruggedness and reliability. An exciting technical program compiled is addressing the next generation of power devices with a strong focus on wide bandgap material and the latest research results on advanced digital controlled power converters for industry and automotive applications.

Highlights of important development trends
Definitely an exciting discussion will come up of how to manage the ultrafast switching devices with extremely high power density in terms of circuit parasitics and thermal management. In the keynote presentations this year, we are highlighting energy digitalization, power density and efficiency in data centers of the future as well as driving and protection of SiC devices. Distinguished speakers will be discussing high power multilevel converter topologies.

Special attention has been paid to research carried out by young engineers with the presenta-tion of the Young Engineer and Best Paper Awards during the PCIM Asia Conference 2021 – this is certainly one of the highlights of the conference.
Guangzhou Guangya Messe Frankfurt Co. Ltd. (Ed.)

New 5.2kV StakPak Platform with Innovative Second Generation BIGT chip

Autoren: Boksteen, Boni; De Michielis, Luca; Tsyplakov, Evgeny; Chen, Makan; Prindle, Daniel; Dugal, Franc; Vitale, Wolfgang Amadeus; Baschnagel, Andreas; Paques, Gontran


Increasing in the Output Power of IGBT Modules by Applying RC-IGBT Technology for High-Power Applications

Autoren: Ebukuro, Yuta; Yamano, Akio; Kakefu, Mitsuhiro; Oda, Yuki; Mitsuzuka, Kaname; Momota, Seiji; Itoh, Taichi; Okita, Souichi; Yoshiwatari, Shinichi; Kobayashi, Yasuyuki


Easy-to-Scale Paralleling for IGBTs in Renewable Energy Application

Autoren: Chen, Jianlong; Wang, Hao; Fink, Karsten


An Improved Performance of High Voltage RC-IGCT for Applications up to 5.3 kVDC

Autoren: Vemulapati, Umamaheswara Reddy; Stiasny, Thomas; Winter, Christian; Corvasce, Chiara; Luescher, Matthias


11 kW High-efficiency bidirectional CLLC converter with 1200 V SiC MOSFET

Autoren: Chen, Rui; Shi, Sanbao; Zhang, Cheng; Shi, Wei


Volume Optimization of a 300kW MMC based DC-DC Converter for a DC Grid Connected Agricultural Machine

Autoren: Iqbal, Hafiz Kashif; dos Santos, Pedro Leal; Ismail, Jawad; Liu, Steven


Improvement of SCSOA, I I2t and reliability of in in-vehicle power modules by RC RC-IGBT and leadframe structure

Autoren: Isono, Tomohiro; Nakano, Hayato; Kitamura, Akio; Inoue, Daisuke; Yoshida, Souichi



Fabrication and characterization of 3.3kV SiC MOSFET with embedded Junction Barrier Schottky Diode

Autoren: Zheng, Changwei; Liu, Qijun; Wang, Yafei; Ma, Yachao; Li, Lele; Lu, Wuyue; Li, Chengzhan



Investigation on electrical characteristic of 3.3kV SiC MOSFET with integrated SBD

Autoren: Song, Guan; Wang, Yafei; Chen, Ximing; Li, Chenzhan


New Developed 1000A/6500V IGBT Module Based on TMOS+ IGBT and PIC FRD Technology

Autoren: Zhou, Feiyu; Wang, Hui; Zhu, Liheng; Liu, Pengfei; Xiao, Haibo; Qin, Rongzhen; Xiao, Qiang; Luo, Haihui


A Flexible, Physically based SPICE Model for the JFET Resistance in Silicon Carbide and Super-Junction MOSFETs

Autoren: Jia, Kan; Xiao, Yunpeng; Betak, Petr; Foff, Jaromir; Lehocky, Jiri; Zurek, Dan; He, Canzhong; Victory, James


AC/DC converter for aircraft power supply system

Autoren: Kuznetsov, Nikolay; Volskiy, Sergey; Sorokin, D. A.; Yuldashev, M. V.; Yuldashev, Renat





The Latest Generation Small Intelligent Power Module for Compact Inverter systems

Autoren: Ohashi, Hidetomo; Yamada, Tadanori; Tamura, Takahiro; Jonishi, Akihiro; Chen, Song; Kobayashi, Yasuyuki


Using Zth matrix model for more accurate Tvj calculation for IGBT power modules

Autoren: Zhang, Hao; Lassmann, Matthias; Yilmaz, Koray; Chen, Lifeng


Research on the Feasibility of Industry LV100 Modules Applied in Onshore Wind Power Converters

Autoren: Zhao, Rui; Zhang, Yuancheng; Lu, Siqing; Ma, Xiankui







Circuit Protection with SiC FETs in dual-gate configuration

Autoren: Bhalla, Anup; Li, Xueqing; Dodge, Jonathan


3.3kV SiC Power MOSFETs with High–k Gate Dielectric

Autoren: Romano, Gianpaolo; Mihaila, Andrei; Knoll, Lars


1700V rated All SiC module with 2nd generation trench gate SiC-MOSFETs

Autoren: Takasaki, Aiko; Kani, Tomoyuki; Okumura, Keiji; Maruyama, Rikihiro; Kusunoki, Yoshiyuki; Kobayashi, Yasuyuki; Song, Chen





Accurate Measurement of EV Range

Autoren: Marks, Mitch; Li, Jane


TCL-based Parallel Study of 3.3kV Full SiC Power Modules

Autoren: Sun, Jian; Hu, Bo; Song, Gaosheng


Silicon Nitride and Electric Vehicles

Autoren: Wang, Xiao Si


Reducing Design-For-Manufacturing Complexity with Tool-Free Solder Preform Technology for Power Module Assembly

Autoren: Hertline, Joseph; Jensen, Timothy; Karch, Andreas; Hutzler, Aaron; Hu, Leo Yan Jie