Research on discrete IGBT7 H7 1200 V in inverter for Solar and UPS applications

Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China

doi:10.30420/566131012

Tagungsband: PCIM Asia 2023

Seiten: 4Sprache: EnglischTyp: PDF

Autoren:
Zhou, Ming (Infineon Semiconductor (Shenzhen) Co. Ltd., China)
Zhou, Liwei (Infineon Technologies China Co. Ltd., China)

Inhalt:
This paper presents the research results on the newly introduced Infineon TRENCHSTOP(TM) IGBT7 H7 1200 V technology, including the performance evaluation and comparison with predecessor 1200 V H3, CS6 IGBT based on doing double pulse test, and also giving the system benefits by simulation under application conditions. Thanks to the latest Micro-Pattern Trench technology and thereafter dramatic switching losses and conduction losses reduction, Infineon IGBT7 H7 1200 V is the most promising candidate to address the high switching applications like Solar and UPS inverters, which are more caring about efficiency improvement and system power density increasement.