Guangzhou Guangya Messe Frankfurt Co Ltd. (Hrsg.)

PCIM Asia 2023

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 29 – 31 August 2023, Shanghai, China

2023, 392 Seiten, 140 x 124 mm, Slimlinebox, CD-Rom
ISBN 978-3-8007-6131-9, E-Book: ISBN 978-3-8007-6132-6
Persönliche VDE-Mitglieder erhalten auf diesen Titel 10% Rabatt

Inhaltsverzeichnis Vorwort

The PCIM Asia Conference brings together the world´s foremost experts and decision maker from industry and academia in the field of power electronic components and systems to discuss future technology trends and launching new products in the market. Power electronic components and energy conversion systems today are driven by WBG technologies, the electrification of all transportation vehicles, renewable energy technologies, communication equipment and artificial intelligence. WBG devices gives a new freedom in the design of ultra-high power density converters along with high efficiency ratings. Researchers from academia and experts from industry will provide presentations covering new developments in the field of power devices, advanced packaging technologies with outstanding reliability, future power converters for automotive and renewable energy systems. This year in our technical program we are covering innovations along the power electronic roadmap in addition to three leading experts for keynote presentations, one special session on GaN based high power density supplies and one tutorial on advanced power modules. The PCIM Asia is a worldwide magnet for design engineers and researchers in the field of power electronics as well as decision makers from companies to generate new market segments and trigger future research directions.
Guangzhou Guangya Messe Frankfurt Co., Ltd – one of the world's three major exhibitions in Frankfurt Exhibition Co., Ltd. and Guangzhou and set up the first and strongest one of the private exhibition in Guangzhou Guangya Exhibition Trade Co., Ltd. was jointly established in 2005, is the first Sino-foreign cooperation in Guangzhou Exhibition Corporation. Guangya Messe Frankfurt in order to build China's international brand exhibition as their responsibility to become the world's leading exhibition companies.
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A Snapback-Free Reverse-Conducting LIGBT with P floating region at Collector

Autoren: Wang, Cai-Lin; Du, Wan-Ting; Yang, Wu-Hua; Zhang, Chao

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Accurate Switching Behavior Modeling for SiC MOSFETs Considering Dynamic Output Characteristics

Autoren: Zhou, Yimin; Wang, Zhiqiang; Yang, Yayong; Xin, Guoqing; Shi, Xiaojie; Kang, Yong

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More than an Evolution: a New Power MOSFET Technology for Higher Efficiency of Power Supplies

Autoren: Song, Owen; Siemieniec, Ralf; Mazzer, Simone; Braz, Cesar; Noebauer, Gerhard; Hutzler, Michael; Laforet, David; Pree, Elias; Ferrara, Alessandro

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Modeling and Validation of a Silicon-Carbide Power Module

Autoren: Zhang, Leon (Lizhen); Cho, Dylan; Paul, Roveendra; Victory, James; Tian, Bo

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Analysis of Input Current Distortion in Three-phase Current Source PWM Rectifier

Autoren: Li, Binghui; Zhou, Shuhan; He, Mingzhi; Zhang, Yanzi; Liu, Gao

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A Trench Gate Reverse-Conducting IGBT with a Shallow Oxide Trench and a Floating P-Region

Autoren: Wang, Cai-Lin; Cheng, Rong-Hua; Yang, Wu-Hua; Zhang, Ru-Liang

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The Research on Influencing Factors of 650V IGBT’s Turn-off dVce/dt Controllability

Autoren: Li, Rui; Ma, Keqiang; Wang, Siliang; Xiang, Yi; Liu, Liangkai; Yang, Ke

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Driver Optimization Method Based on GeneticAlgorithm for IGBT

Autoren: Lin, Chengyang; Ma, Mingcheng; Sun, Tianlin; Xu, Dianguo

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A Variable Bypass Current Source Driver Circuit Based on Reference Voltage

Autoren: Ma, Mingcheng; Lin, Chengyang; Sun, Tianlin; Xu, Dianguo

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Research on the Full Temperature Range Characteristics of IGBT

Autoren: Sun, Tianlin; Lin, Chengyang; Ma, Mingcheng; Xu, Dianguo

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Gate oxide degradation of SiC IGBT induced by non-constant thermal-electrical coupled stresses

Autoren: Luo, Rongde; Yang, Shaodong; Luo, Xia; Niu, Hao; Kuang, Xianjun; Xu, Xiaowei; Dong, Huafeng; Dai, Zongbei; Wu, Fugen

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A New Parameter-free Predictive Current Control for PMSM

Autoren: Zhang, Guofu; Zhang, Xiaoguang

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Derivation Of DC Servo Driver Current Loop Model

Autoren: Han, Bin; Qiu, Jing; Yang, Ming

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Self-tuning Technique of PMSM Current Loop Based on Active Damping

Autoren: Qiu, Jing; Song, Yuchen; Yang, Ming

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Development of the control algorithm for the two-unit fast-charging stations

Autoren: Volskiy, Nikolay; Krapivnoi, Mikhail; Barkovska, Darja

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Panoramic co-simulation technology for large-scale offshore wind power

Autoren: Zhang, Junyang; Guo, Xiaojiang; Li, Zheng

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A Cooperative Control Strategy for AC Fault Ride Through of Offshore Wind Power Based on AC Voltage Fluctuation

Autoren: Li, Chunhua; Yijing, Chen; Guo, Xiaojiang; Shen, Xuhui; Xu, Sun

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2.3kV Si and SiC devices development for renewable energy system

Autoren: Chen, Shuangching; Sekino, Yusuke; Takaku, Taku; Okumura, Keiji; Uchida, Takafumi; Mitsuzuka, Kaname; Onozawa, Yuichi; Kusunoki, Yoshiyuki; Kobayashi, Yasuyuki; Song, Chen

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Wide Bandgap Semiconductor – a foundry perspective

Autoren: Wei, Heming; Jahnke, Agnes

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Implantation optimization for 1200 V SiC MPS with ultra-low leakage current and high surge current capability

Autoren: Yi, Bo; Xu, Yi; Ma, KeQiang; Wang, SiLiang; Cheng, JunJi; Yang, HongQiang; Jiang, Xingli; Hu, Qiang

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A Control Strategy Enabling Compatible 1-Ph/3-Ph V2L Operations for EV Chargers with Improved Leg Utilizations

Autoren: Chen, Peng; Yuan, Ziheng; Wu, Zhouyu; Wu, Wei; Li, Helong; Yang, Zhiqing; Zhao, Shuang; Yu, Zixiang; Ding, Lijian; Wang, Lijun; Huo, Wei

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3MHz GaN DC-DC 48Vin direct to 0.6Vout realized by ultra-short pulse(5ns) using Virtual Peak Current Mode control technique

Autoren: Takobe, Isao; Yamashita, Hiroshi; Otani, Junki; Kawano, Akihiro; Zaitsu, Toshiyuki

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A four-chip parallel IGBT module based on the latest generation technology used in Photovoltaic Centralized Inverter

Autoren: Tao, Zhang; Xuanxuan, Wang; Rui, Rong; Shuai, Cao; Shuo, Miao; Guokang, Chen

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Low loss and High-cooling-performance automotive power module for 160 kW EV application

Autoren: Ebuchi, Yoshihisa; Shimada, Naoya; Kawakami, Yoshihiko; Seki, Youichirou; Watanabe, Manabu; Yoshida, Souichi; Takeuchi, Yuuta; Tateishi, Yoshihiro

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New Generation 750V IGBT modules for automotive application

Autoren: Liu, Zhihong; Tang, Yi; Yan, Jinchun; Yong, Fu; Zheng, Songlin; Ma, Jiajie; Chen, Ye; Ling, Xi; Yao, Lijun

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Thermal model of fully-molded, multi-chip power modules

Autoren: Young, Sungmo; Lee, Taejin; Kwon, Hyukdong

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Introduction of RC-IGBT Based Transfer Mold SOPIPM(TM)

Autoren: Wang, Xiaoling; Chen, Jian; Goto, Akiko

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30A/600V RC-IGBT Based Transfer Molded IPM for Home Appliance Application

Autoren: Kai, Jiang; Joko, Motonobu; Huang, HongGuang

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An 820A 750V IGBT Module with Excellent Performance for Inverter of Electric Vehicle

Autoren: Miao, Shuo; Rong, Rui; Chen, Chao; Zhang, Tao; Cao, Shuai; Chen, Guokang; Meng, Yadong

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3-level T-type 4-in-1 Module for Active Front End Solution

Autoren: Murakami, Haruki; Nishida, Nobuya; Lu, Siqing; Zhang, Yuancheng

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Study on Microstructure and Mechanical Properties of Copper-Copper Bonding by Ultrasonic Welding

Autoren: Pang, Xiaofei; Zhang, Xiankun; Zhang, Xiaodong; Zhang, Jianning

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Study on harmonic response of wirebond in high power IGBT module under ultrasonic welding process

Autoren: Li, Xingfeng; Huang, Jianxin; Luo, Zhangzhen; Chang, Guiqin; Shi, Tinchang; Luo, Haihui; Xiao, Qiang

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Optimization of Pinfin Heat Sink for SiC Power Module based on LBM-LES

Autoren: Cui, Jian; Ning, Puqi; Hui, Xiaoshuang

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An Accurate 3D Thermal Simulation Method Based on Neural Network-Aided Power Loss Model

Autoren: Yang, Yayong; Wang, Zhiqiang; Zhou, Yimin; Xin, Guoqing; Shi, Xiaojie; Kang, Yong

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Research on the improvement of IGBT module surge capability

Autoren: Chang, Guiqin; Zou, Xi; Fang, Chao; Luo, Haihui; Xiao, Qiang; Wang, Yangang

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Low-Loss Molding Inductor analysis

Autoren: Tsuo, Kunming; Wiest, David

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Method of avoiding plastic IGBT module’s torque loss in harsh application environment

Autoren: Cao, Shuai; Chen, Chao; Rong, Rui; Zhang, Tao; Miao, Shuo

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Comprehensive Loss and Thermal Performance Analysis of Three-level T-type Grid-connected Converters

Autoren: Han, Liangliang; Wu, Wei; Zhang, Man; Li, Helong; Yang, Zhiqing; Zhao, Shuang; Ding, Lijian; Deng, Shuai; Li, Zhenyang

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Gate Circuit improves p-GaN HEMT VTH reliability

Autoren: Liu, Xinke; Chen, Zengfa; Zhong, Ze; Zhang, Qiyan; Li, Xiaobo; Qiu, Feng; Xu, Yong; Zhuang, Wenrong; Chen, Longkou; Huang, Shuangwu; Gao, Linfei

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Distributed Real-Time Simulation System for Power Converter-Dominated Grid

Autoren: Cao, Zhiyu; Zhang, Peilin; Cao, Yilong; Cui, Haoyang

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The MMC Based DC Transformer With Reshaped Circulating Current

Autoren: Hou, Wenlong; Zhao, Xiaodong; Li, Binbin; Xu, Dianguo

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New generation high power semiconductors for 8GW VSC-HVDC applications

Autoren: Tsyplakov, Evgeny; Gupta, Gaurav; Vobecky, Jan; Jones, Jeremy; Boksteen, B.; Michelis, L. D.; Winter, Christian; Chen, Makan

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GaN switches enable high performance architecture for USB-PD EPR Adaptors

Autoren: Ausseresse, Pierrick; Medina-Garcia, Alfredo; Daimer, Josef; Schlenk, Manfred

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