Implantation optimization for 1200 V SiC MPS with ultra-low leakage current and high surge current capability
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131031
Tagungsband: PCIM Asia 2023
Seiten: 3Sprache: EnglischTyp: PDF
Autoren:
Yi, Bo; Xu, Yi; Cheng, JunJi; Yang, HongQiang (University of Electronic Science and Technology of China, China)
Ma, KeQiang; Wang, SiLiang; Jiang, Xingli; Hu, Qiang (Chengdu Semi-Future Technology Co., Ltd, China)
Inhalt:
In this paper, we fabricated a 1200 V/20 A SiC Merged PiN Schottky (MPS) with extremely low leakage current and high surge current capability by implantation optimization. With a typical value of VF = 1.5 V, the measured leakage current (@1200 V) at room temperature and 175 °C is only 3.1 muA and 7.4 muA, respectively, which is over 50% lower than those from company A and B. Due to earlier turn-on of PN diode and enhanced modulation effect, the measured surge current is over 254 A, which is ~13 times of the rated current and is 67% and 17% improved compared with those of company A and B.