Gate Circuit improves p-GaN HEMT VTH reliability
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131062
Tagungsband: PCIM Asia 2023
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Liu, Xinke; Chen, Zengfa; Zhong, Ze; Zhang, Qiyan; Li, Xiaobo; Huang, Shuangwu; Gao, Linfei (College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, China)
Qiu, Feng; Xu, Yong (Gensol (Shenzhen) Tech. Innovation Center Co., Ltd., Shenzhen, China)
Zhuang, Wenrong (Dongguan Sino Nitride Semiconductor Co., Ltd., Dongguan, China)
Chen, Longkou (Shenzhen Baseus Technology Co., Ltd., Shenzhen, China)
Inhalt:
Due to the relative maturity and controllability in the epitaxial growth of p-GaN layers compared to the other techniques, p-GaN/AlGaN/GaN HEMTs are considered the leading structure for enhancement mode HEMT. In the p-GaN layer, the presence of defects related to Magnesium doping and the generation of defects due to the presence of a high electric field can lead to threshold voltage drift via a defect percolation process and ultimately result in device failure. In this work, the p-GaN gate HEMT circuit to designed to control the gate switch speed, and improve the gate reliability.