21
Effect of Diamonds on Pad Recovery in Oxide and Metal Pad Conditioning Process
Autoren:
Kang, Bong-Kyun; Kang, Young-Jae; Kim, Kyu-Chae; Park, Jin-Goo; Lee, Joo-Hwan; Ahn, Jung-Su
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
22
Effect of Pad Hole on ECMP process
Autoren:
Jeong, Sukhoon; Lee, Sangjik; Park, Jaehong; Kim, Hyoungjae; Jeong, Haedo
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
23
Effect of polish stopper film in STI-CMP for 45nm node devices and beyond
Autoren:
Watanabe, Takashi; Shibata, Seiichi; Idani, Naoki; Nakamura, Makoto; Tamura, Yasuyuki; Kase, Masataka; Miyajima, Motoshu
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
24
Effect of Slurry pH on Poly Silicon CMP
Autoren:
Kang, Young-Jae; Kang, Bong-Kyun; Park, Jin-Goo; Hong, Yi-Koan; Han, Sang-Yeob; Yun, Seong-Kyu; Yoon, Bo-Un; Hong, Chang-Ki
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
25
Enhanced control and manufacturing for CMP processing with advanced blending and delivery of slurries
Autoren:
Liu, Guojun; Moulton, Russell; Flores, Gary; Han, Leon
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
26
Evaluation and de-coupling of electrochemical and mechanical effects of diluted WCMP commercial slurry on tungsten removal rate
Autoren:
Gianni, Davide M.; Gianni, Davide M.; Mazzarolo, Alice; Masciocchi, Norberto; Maspero, Angelo; Spinolo, Giulia; Vicenzo, Antonello
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
27
Evaluation of Cu CMP Barrier Slurries for Ultra Low-k dielectric film (k~2.4) for 45nm technology
Autoren:
Zhao, Feng; Economikos, Laertis; Tseng, Wei-tsu; Kim, Hyun-ki; Engbrecht, Edward; Standaert, Theodorus E.; Li, Jing Hui; Liu, Wu Ping; Chae, Moosung; Nicholson, Lee M.; Sankaran, Sujatha
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
28
Experimental Analysis on CMP Mechanism of Single Crystal SiC
Autoren:
Lee, Houjun; Jeong, Sukhoon; Seo, Heondeok; Park, Beomyoung; Oh, Jiheon; Jeong, Haedo; Kim, Hyoungjae
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
29
Fabrication of Surface Acoustic Wave Structures with buried Copper IDTs using the Copper Damascene Process
Autoren:
Menzel, S.; Reitz, D.; Künzelmann, U.; Albert, M.; Bartha, J.-W.
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
30
Full Sequence Ecmp for Advanced Low Stress Copper Planarization
Autoren:
Groschopf, Johannes; Steffen, Katja; Donohoe, Ray; Kober, Christian; Richter, Dirk; Kramer, Jens; Seidel, Robert; Grillberger, Michael; Gu, Haiyang; Hu, Yongqi; Wang, You; Wang, Yuchun
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
31
Full-Chip CMP Simulation System
Autoren:
Fukuda, Daisuke; Shibuya, Toshiyuki; Idani, Naoki; Karasawa, Toshiyuki
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
32
Greenwood-Williamson Model for Pattern-Dependent Planarization
Autoren:
Rzehak, Roland; Vasilev, Boris
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
33
Impact of a High Pressure Micro Jet (HPMJ) on the conditioning and cleaning of unwoven fabric polyester pads in silicon polishing
Autoren:
Miyachi, Keiji; Seike, Yoshiyuki; Haba, Shinichi; Kurokawa, Syuhei; Doi, Toshiro K.
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
34
Impact of ceria properties and CMP parameters on STI CMP performance
Autoren:
Messemaeker, Jo De; Sinapi, Fabrice; Ong, Patrick; Put, Stijn; Nelis, Daniël; Bosch, Jeroen van den; Strauven, Yvan; Lippens, Paul; Devriendt, Katia
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
35
Improvements of Electrical and Optical Property of Organic Light Emitting Diode using Chemical Mechanical Polishing Process
Autoren:
Choi, G. W.; Lee, W. S.; Seo, Y. J.
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
36
In-Situ Investigation of Wafer-Slurry-Pad Interactions during CMP
Autoren:
Braun, N.; Gray, C.; Mueller, A.; Vlahakis, J.; Gauthier, D.; Manno, V. P.; Rogers, C.; White, R.; Anjur, S.; Moinpour, M.
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
37
Influence of Pad Structures on Slurry Performance for Cu CMP
Autoren:
Li, Yuzhuo; Cheemalapathi, Krishnayya; Wang, Changxue; Tetsujiro, Tada; Arahata, Takashi; Kodaba, Ichiro; Watanabe, Jun
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
38
Influence of STI Trench Fill and Dummy Design on CMP Behavior
Autoren:
Ong, P.; Devriendt, K.; Redolfi, A.; Okuno, Y.; Hernandez, J. L.
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
39
Influence of the wafer shape on polishing performance for 300 mm prime wafer polishing
Autoren:
Langenkamp, M.; Kanzow, J.; Mörsch, G.
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology
40
Insitu Characterization of Cu CMP with peroxide based slurries containing arginine as complexing agent
Autoren:
Prasad, Y. Nagendra; Ramanathan, S.
Konferenz:
ICPT 2007 - International Conference on Planarization / CMP Technology