IEC 62373-1:2020
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
Ausgabedatum:
2020-07
Edition:
1.0
Sprache: EN-FR - zweisprachig englisch/französisch
Seitenzahl: 44 VDE-Artnr.: 248984
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.