IEC 63601:2026Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion
315,65 €
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IEC 63275-2:2022Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
42,80 €
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IEC 63275-1:2022Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
85,60 €
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IEC 63284:2022Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
85,60 €
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IEC 60747-8:2010+AMD1:2021 CSV (Consolidated Version)Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
759,70 €
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IEC 60747-8:2010/AMD1:2021Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
42,80 €
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IEC 62373-1:2020Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
171,20 €
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IEC 60747-7:2010/AMD1:2019Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
10,70 €
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IEC 60747-7:2010+AMD1:2019 CSV (Consolidated Version)Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
759,70 €
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IEC 60747-8:2010Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
406,60 €
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IEC 62417:2010Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
21,40 €
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IEC 62373:2006Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
85,60 €
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