81
Nanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applications
Autoren:
Naureen, Shagufta; Rajagembu, Perumal; Sanatinia, Reza; Shahid, Naeem; Li, Mingyu; Anand, Srinivasan
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
82
Narrow Linewidth 1.52 µm InAs/InP Quantum Dot DFB Lasers
Autoren:
Poole, P. J.; Lu, Z. G.; Liu, J. R.; Barrios, P.; Jiao, Z. J.; Poitras, D.; SpringThorpe, A. J.; Pakulski, G.; Goodchild, D.; Rioux, B.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
83
Narrow linewidth 1.55 µm laterally-coupled DFB lasers fabricated using nanoimprint lithography
Autoren:
Telkkälä, Jarkko; Viheriälä, Jukka; Bister, Mariia; Karinen, Jukka; Melanen, Petri; Dumitrescu, Mihail; Guina, Mircea
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
84
Noise Properties of Asymmetrically Recessed InP-based HEMTs for Low-noise Amplifiers
Autoren:
Takahashi, T.; Sato, M.; Makiyama, K.; Nakasha, Y.; Hirose, T.; Hara, N.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
85
Novel concept for a Monolithically Integrated MEMS VCSEL
Autoren:
Gruendl, Tobias; Nagel, Robin D.; Debernardi, Pierluigi; Geiger, Kathrin; Grasse, Christian; Hager, Thomas; Ortsiefer, Markus; Rosskopf, Jürgen; Boehm, Gerhard; Meyer, Ralf; Amann, M.-C.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
86
On the remarkable morphological organization of homoepitaxial MOVPE InP films
Autoren:
Gocalinska, A.; Manganaro, M.; Pelucchi, E.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
87
On-chip Laser with Multimode Interference Reflectors Realized in a Generic Integration Platform
Autoren:
Zhao, J.; Kleijn, E.; Williams, P. J.; Smit, M. K.; Leijtens, X. J. M.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
88
Optical properties of wurtzite InAs/lnP core-shell nanowires grown on silicon substrates
Autoren:
Khmissi, H.; Khmissi, H.; Alouane, M. H. Hadj; Alouane, M. H. Hadj; Chauvin, N.; Naji, K.; Patriarche, G.; Ilahi, B.; Maaref, H.; Bru-Chevallier, C.; Gendry, M.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
89
Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonics
Autoren:
Junesand, Carl; Hu, Chen; Wang, Zhechao; Metaferia, Wondwosen; Lourdudoss, Sebastian
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
90
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Autoren:
Schleeh, J.; Halonen, J.; Nilsson, B.; Nilsson, P. Å.; Zeng, L. J.; Ramvall, P.; Wadefalk, N.; Zirath, H.; Olsson, E.; Grahn, J.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
91
Performance and Reliability Investigations of Waveguide-Integrated Photodetectors
Autoren:
Kroh, Marcel; Beling, Andreas; Trommer, Dirk; Margraf, Michael; Unterbörsch, Günter
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
92
Performance of InP-Based 90deg-Hybrids QPSK Receivers within C-Band
Autoren:
Zhang, R.-Y.; Janiak, K.; Bach, H.-G.; Kunkel, R.; Seeger, A.; Schubert, S.; Schell, M.; Matiss, A.; Umbach, A.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
93
Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structure
Autoren:
Fukuda, Ayako; Esaki, Miyuki; Akimoto, Mio; Imai, Hajime
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
94
Positioned Growth and Spectroscopy of InP Nanowires Containing Single InAsP Quantum Dots
Autoren:
Poole, P. J.; Dalacu, D.; Lapointe, J.; Mnaymneh, K.; Wu, X.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
95
Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT
Autoren:
Koné, G. A.; Ghosh, S.; Grandchamp, B.; Maneux, C.; Marc, F.; Labat, N.; Zimmer, T.; Maher, H.; Bourqui, M. L.; Smith, D.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
96
Proposal and Numerical Analysis of Ultra-fast Optical Logic Devices with Integrated InAs QD-SOA and Ring Resonato
Autoren:
Matsumoto, A.; Kuwata, K.; Akahane, K.; Utaka, K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
97
Pyramidal quantum dots: a versatile playground for quantum dot design and physics
Autoren:
Pelucchi, E.; Dimastrodonato, V.; Mereni, L. O.; Juska, G.; Gocalinska, A.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
98
Reduction of source parasitic capacitance in vertical InGaAs MISFET
Autoren:
Matsumoto, Yutaka; Saito, Hisashi; Miyamoto, Yasuyuki
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
99
Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder Modulators
Autoren:
O'Callaghan, James R.; Roycroft, Brendan; Guo, Wei-Hua; Lu, Q. Y.; Daunt, Chris; Daunt, Chris; Donegan, John; Peters, Frank H.; Peters, Frank H.; Corbett, Brian
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
100
Regrowth-Free Multi-Guide Vertical Integration in InP for Optical Communications
Autoren:
Tolstikhin, Valery
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials