1
Low Surface Roughness Epic™ D2xx soft pads for CMP Applications
Autoren:
Nair, Jay; Lu, Shaoning; Page, Joseph; Bigoin, Gilles; Sun, Fred; Gaudet, Greg
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
2
Microreplicated Pad Conditioner for Copper Barrier CMP Applications
Autoren:
Zabasajja, John; Le-huu, Duy; Gould, Charles
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
3
Oxide Rate and Selectivity as a Function of Pad Chemistry,
Autoren:
Renteln, Peter; Hsu, Oscar
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
4
Particle Reduction in W-CMP Process through Optimizing Post Cleaner
Autoren:
Kim, Nam Yun; Kim, Kuen Byul; Jang, Young Seok; Lee, Jae Chang; Hong, Jin Suk; Baek, Kye Hyun; Kim, Hee Seok; Cho, Han Ku
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
5
Performance of a Novel Slurry Injection System on an Ebara F-REX200® Polisher for a Silicon Dioxide CMP Application
Autoren:
Borucki, Leonard; Zhuang, Yun; Sampurno, Yasa; Philipossian, Ara; Kreutzer-Schneeweiss, Sascha
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
6
Planarization Efficiency of Copper Protrusion
Autoren:
Lin, Jie; Poutasse, Charles A.
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
7
Process Optimization of Grinding and CMP for Thinning of Si
Autoren:
Feeney, Paul; Shumway, Lynn
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
8
Processing Properties of Strong Oxidizing Slurry and Effect of Processing Atmosphere in SiC-CMP
Autoren:
Yin, Tao; Doi, Toshiro; Kurokawa, Syuhei; Ohnishi, Osamu; Yamazaki, Tsutomu; Wang, Zhida; Tan, Zhe
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
9
Reduction of Edge Exclusion by EPC ring in CMP process
Autoren:
Park, Yeongbong; Lee, Youngkyun; Yuh, Minjong; Jeong, Haedo
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
10
Relationship between Spatial Wavelength Pad Surface Profile and Pattern Step-height Reduction with 28 nm Ceria Particle Slurry
Autoren:
Moon, Jinok; Bae, Jae-Young; Seo, Jihoon; Paik, Ungyu
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
11
Research on the controlling technology of deliquescent action in polishing of KDP crystals based on deliquescent action
Autoren:
Guo, Shaolong; Zhang, Feihu; Zhang, Yong
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
12
Role of Abrasive Type and Media Surface Energy on Nanoparticle Adsorption
Autoren:
Kaiser, Jordan; Streit, Michael; Connor, Patrick; Levy, Patrick; Keleher, Jason J.
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
13
Scratch Reduction by using Nano-colloidal Ceria Slurry with Multiselectivity of SiO2/Si3N4/Poly-Si Films in STI-CMP
Autoren:
Kang, Hyun-Goo; Koh, Jeong-Deog; Han, Seung-Woo; Lee, Jin Won; Lee, Byoun-Gki; Pyi, Seung- Ho; Lee, Byung-Seok; Kim, Jin-Woong; Reiss, Brian; Jeong, Jae-Deok; Nam, Chul-Woo; Jang, Ju-Yeon; Choi, Kyo-Se; Dysard, Jeffrey; Woodland, Daniel
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
14
Slurry Abrasive Particle Agglomeration Experimentation and Modeling for Chemical Mechanical Planarization (CMP)
Autoren:
Johnson, Joy M.; Boning, Duane S.; Kim, Gwang-Soo; Safier, Paul; Knutson, Karson
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
15
Slurry Development for Copper/Barrier CMP
Autoren:
Zhang, Baoguo; Liu, Yuling
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
16
Slurry selectivity influence on STI and POP processes for RMG application
Autoren:
Euvrard, C.; Perrot, C.; Seignard, A.; Dettoni, F.; Rivoire, M.
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
17
Smart pad dressing for double-side polishing
Autoren:
Kanzow, J.; Werth, S.; Mörsch, G.
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
18
STI CMP stop in Silicon Nitride controlled by FullVision™ endpoint
Autoren:
Perrot, C.; Pitard, F.; Cui, S.; Lam, G.; Del Medico, S.; Bennett, D.; Gaillard, S.; Hinsinger, O.
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
19
Study on fine particle behavior in slurry flow between wafer and polishing pad as a material removal process in CMP
Autoren:
Kimura, Keiichi; Suzuki, Keisuke; Khajornrungruang, Panart
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology
20
Study on Polishing Properties for Phase Change Memory
Autoren:
Bae, Jinwoo; Lee, Wonjun; Park, Seungho; Lee, Jae-Dong; Hwang, Inseak; Nam, Seok-Woo
Konferenz:
ICPT 2012 - International Conference on Planarization / CMP Technology