1
100nm-gate-Iength In0.47Ga0.53As multi-gate MOSFET: fabrication and characterisation
Autoren:
Mo, J. J.; Wichmann, N.; Roelens, Y.; Zaknoune, M.; Desplanque, L.; Wallart, X.; Bollaert, S.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
2
1550 nm Flip-Chip Compatible Electroabsorption-Modulated Laser with 40 Gb/s modulation capability
Autoren:
Kreissl, Jochen; Bornholdt, Carsten; Gaertner, Tom; Moerl, Ludwig; Przyrembel, Georges; Rehbein, Wolfgang
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
3
20 nm Metamorphic HEMT with 660 GHz FT
Autoren:
Leuther, A.; Koch, S.; Tessmann, A.; Kallfass, I.; Merkle, T.; Massler, H.; Loesch, R.; Schlechtweg, M.; Saito, S.; Ambacher, O.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
4
25-Gb/s Multi-channel 1.3-µm Surface-emitting Laser
Autoren:
Adachi, K.; Adachi, K.; Shinoda, K.; Shinoda, K.; Kitatani, T.; Kitatani, T.; Matsuoka, Y.; Sugawara, T.; Tsuji, S.; Tsuji, S.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
5
4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder interferometer-type optical switches with low-power and low-polarization-dependent operation
Autoren:
Ueda, Yuta; Koyama, Noriaki; Kambayashi, Kazuki; Fujimoto, Shinji; Utaka, Katsuyuki; Shiota, Takashi; Kitatani, Takeshi
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
6
8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer run
Autoren:
Lawniczuk, K.; Lawniczuk, K.; Piramidowicz, R.; Szczepanski, P.; Szczepanski, P.; Williams, P. J.; Wale, M. J.; Smit, M. K.; Leijtens, X. J. M.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
7
80deg C Continuous Wave Operation of Photonic-Crystal Nanocavity Lasers
Autoren:
Takeda, Koji; Sato, Tomonari; Shinya, Akihiko; Nozaki, Kengo; Chen, Chin-Hui; Kawaguchi, Yoshihiro; Taniyama, Hideaki; Notomi, Masaya; Matsuo, Shinji
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
8
A 300 GHz InP/GaAsSb/InP HBT for high data rate applications
Autoren:
Maher, H.; Delmouly, V.; Rouchy, U.; Renvoise, M.; Frijlink, P.; Smith, D.; Zaknoune, M.; Ducatteau, D.; Avramovic, V.; Scavennec, A.; Godin, J.; Riet, M.; Maneux, C.; Ardouin, B.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
9
A Compact High-Speed RTD-based Reconfigurable Logic Gate
Autoren:
Lee, Jooseok; Lee, Jongwon; Yang, Kyounghoon
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
10
A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometer
Autoren:
Zhao, Z.; Ferlazzo, L.; Decobert, J.; Harmand, J. L.; Oudar, J. L.; Bouchoule, S.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
11
A Generic InP-based Photonic Integration Technology
Autoren:
Ambrosius, H. P. M. M.; Leijtens, X. J. M.; Vries, T. de; Bolk, J.; Smalbrugge, E.; Smit, M. K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
12
ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics Platform
Autoren:
Ikku, Y.; Yokoyama, M.; Iida, R.; Sugiyama, M.; Nakano, Y.; Takenaka, M.; Takagi, S.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
13
AlGaInAs based photonic devices for high-speed data transmission
Autoren:
Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Simoyama, Takasi; Simoyama, Takasi; Simoyama, Takasi; Tanaka, Shinsuke; Matsuda, Manabu; Matsuda, Manabu; Matsuda, Manabu; Uetake, Ayahito; Uetake, Ayahito; Uetake, Ayahito; Okumura, Shigekazu; Ekawa, Mitsuru; Ekawa, Mitsuru; Ekawa, Mitsuru; Morito, Ken
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
14
All-Optical Gating Operation in Hybrid Si/III-V Mach-Zehnder Interferometer
Autoren:
Shoji, Yuya; Akimoto, Ryoichi; Kintaka, Kenji; Suda, Satoshi; Kawashima, Hitoshi; Gozu, Shin-ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Hasama, Toshifumi; Ishikawa, Hiroshi
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
15
Analysis and optimization by micro-beam X-ray diffraction of Al-GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applications
Autoren:
Guillamet, Ronan; Lagay, Nadine; Mocuta, Cristian; Carbone, Gerardina; Lagrée, Pierre-Yves; Decobert, Jean
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
16
Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell properties
Autoren:
Wang, Yunpeng; Wen, Yu; Sugiyama, Masakazu; Nakano, Yoshiaki
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
17
Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopy
Autoren:
Kim, K. M.; Kim, W. B.; Krishnamurthy, D.; Ishimaru, M.; Kobayashi, H.; Hasegawa, S.; Asahi, H.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
18
Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction
Autoren:
Nardmann, Tobias; Lehmann, Steffen; Schröter, Michael; Schröter, Michael; Driad, Rachid
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
19
Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)
Autoren:
Lenz, Andrea; Eisele, Holger; Genz, Florian; Franke, Dieter; Künzel, Harald; Pohl, Udo W.; Dähne, Mario
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
20
Carrier Injection in GaAsPN/GaPN Quantum Wells on Silicon
Autoren:
Cornet, C.; Robert, C.; Thanh, T. Nguyen; Guo, W.; Bondi, A.; Elias, G.; Létoublon, A.; Richard, S.; Burin, J.-P.; Perrin, M.; Jancu, J.-M.; Durand, O.; Even, J.; Loualiche, S.; Folliot, H.; Bertru, N.; Ponchet, A.; Corre, A. Le
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials