1
Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy
Autoren:
Tawil, S. N. M.; Zhou, Y. K.; Krishnamurthy, D.; Emura, S.; Hasegawa, S.; Asahi, H.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
2
Characteristics of Step-Graded InxGa1-xAs and InGaPySb1-y Metamorphic Buffer Layers on GaAs Substrates
Autoren:
Kirch, J.; Dudley, P.; Kim, T.; Radavich, K.; Ruder, S.; Mawst, L. J.; Kuech, T. F.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
3
Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications
Autoren:
Zhao, Huan; Zhao, Huan; Do, Thanh Ngoc Thi; Do, Thanh Ngoc Thi; Sobis, Peter; Sobis, Peter; Sobis, Peter; Tang, Aik-Yean; Tang, Aik-Yean; Yhland, Klas; Yhland, Klas; Stenarson, Jörgen; Stenarson, Jörgen; Stake, Jan; Stake, Jan
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
4
Current-injected Quantum-dot Microdisk Lasers Operating at Room Temperature
Autoren:
Mao, M.-H.; Chien, H. C.; Hong, J. Z.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
5
Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystal
Autoren:
Castany, O.; Paranthoen, C.; Levallois, C.; Shuaib, A.; Gauthier, J. P.; Chevalier, N.; Durand, O.; Dupont, L.; Corre, A. Le
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
6
Design Improvements for InP-Based 90deg-Hybrid OEICs for 100GE Coherent Frontends
Autoren:
Kunkel, R.; Ortega-Moñux, A.; Bach, H.-G.; Zhang, R.; Hoffmann, D.; Schmidt, D.; Schell, M.; Romero-García, S.; Molina-Fernandez, I.; Halir, R.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
7
Effect of MOVPE Growth Conditions on The Formation of Self-Organized InAs/InGaAsP/InP Quantum Dots
Autoren:
Wenning, Felix; Kuenzel, Harald; Pohl, Udo W.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
8
Electrical Pumping Febry-Perot Lasing of III-V Layer On Highly Doped Silicon Micro Rib by Plasma Assisted Direct Bonding
Autoren:
Li, Linghan; Takigawa, Ryo; Higo, Akio; Higurashi, Eiji; Sugiyama, Masakazu; Nakano, Yoshiaki
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
9
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs
Autoren:
Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca; Zhao, Han; Lee, Jack C.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
10
Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance
Autoren:
Wen, Yu; Wang, Yunpeng; Sugiyama, Masakazu; Nakano, Yoshiaki
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
11
Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric
Autoren:
Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; Veksler, Dmitry; Ok, Injo; Zhao, Han; Lee, Jack C.; Bersuker, Gennadi
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
12
Extended X-ray absorption fine structure of InAsPSb
Autoren:
Wu, Chen-Jun; Tsai, Gene; Feng, Zhe-Chuan; Lin, Hao-Hsiung; Lin, Hao-Hsiung
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
13
FT-DLTS studies on deep levels in InAs quantum dashes grown on InP
Autoren:
Zouaoui, Mouna; Regreny, Philippe; Ajjel, Ridha; Girard, Philippe; Gendry, Michel; Bremond, Georges
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
14
Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit Layers
Autoren:
Teranishi, A.; Shizuno, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
15
GaP(100) and InP(100) surface structures in the MOVPE ambient
Autoren:
Döscher, H.; Möller, K.; Vogt, P.; Kleinschmidt, P.; Hannappel, T.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
16
GHz-level Operation of a Compact RTD-based CNN Basic Cell
Autoren:
Lee, Jongwon; Lee, Jooseok; Yang, Kyounghoon
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
17
Heteroepitaxial bonding of GaInAs quantum wells on Si: a new approach towards photonic integration on Si for devices operating at 1.55micrometer
Autoren:
Talneau, A.; Chouteau, D.; Mauguin, O.; Largeau, L.; Sagnes, I.; Patriarche, G.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
18
High Current Gain of Doping-Graded GaAsSb/lnP DHBTs
Autoren:
Wu, Bing-Ruey; Dvorak, Martin W.; Colbus, Patrick; Low, Tom S.; D'Avanzo, Don
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
19
High Output Power (~400 f..lW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure
Autoren:
Shiraishi, M.; Shibayama, H.; Ishigaki, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
20
High performance InP-based Mach-Zehnder modulators for 10 to 100 Gb/s optical fiber transmission systems
Autoren:
Velthaus, K.-O.; Hamacher, M.; Gruner, M.; Brast, T.; Kaiser, R.; Prosyk, K.; Woods, I.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials