Anzeige
Sortierung
Seite 3 von 7

41

High Performance Submicron RTD Design for mm-Wave Oscillator Applications

Autoren:
Kamgaing, A. Tchegho; Muenstermann, B.; Geitmann, R.; Benner, O.; Blekker, K.; Prost, W.; Tegude, F. J.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

42

High quality photonic crystal waveguide filters based on mode-gap effect

Autoren:
Shahid, Naeem; Naureen, Shagufta; Li, Mingyu; Swillo, Marcin; Anand, Srinivasan
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

43

High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked Lasers

Autoren:
Rosales, R.; Merghem, K.; Martinez, A.; Accard, A.; Lelarge, F.; Ramdane, A.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

44

High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor

Autoren:
Yatskiv, R.; Grym, J.; Zdansky, K.; Piksova, K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

45

High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector Interface

Autoren:
Wang, H.; Mao, S.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

46

High-speed and high-power InGaAs/InP photodiode

Autoren:
Yang, Hua; Daunt, Chris; Daunt, Chris; Lee, Kohsin; Han, Wei; Gity, Farzan; Corbett, Brian; Peters, Frank H.; Peters, Frank H.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

47

High-Speed and Low-Power Static Frequency Divider and Decision Circuit with 0.5-?m-emitter-width InP HBTs

Autoren:
Bouvier, Y.; Nagatani, M.; Sano, K.; Murata, K.; Kurishima, K.; Ida, M.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

48

High-speed directly-modulated lasers with photon-photon resonance

Autoren:
Dumitrescu, M.; Telkkälä, J.; Karinen, J.; Viheriälä, J.; Laakso, A.; Afzal, S.; Reithmaier, J.-P.; Kamp, M.; Melanen, P.; Uusimaa, P.; Greadye, D.; Eisenstein, G.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

49

High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic Operation

Autoren:
Endoh, Akira; Endoh, Akira; Watanabe, Issei; Mimura, Takashi; Mimura, Takashi; Matsui, Toshiaki
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

50

High-yield Manufacturing of InP Dual-Port Coherent Receiver Photonic Integrated Circuits for 100G PDM-QPSK Application

Autoren:
Hu, Ting-Chen; Weimann, N.; Houtsma, V.; Kopf, R.; Tate, A.; Frackoviak, J.; Reyes, R.; Chen, Y. K.; Achouche, M.; Lelarge, F.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

51

Hybrid Photonic Integration of InP-Based Laser Diodes and Polymer PLCs

Autoren:
Soares, F. M.; Zhang, Z.; Przyrembel, G.; Lauermann, M.; Moehrle, M.; Zawadzki, C.; Zittermann, B.; Keil, N.; Grote, N.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

52

III-V CMOS: What have we learned from HEMTs?

Autoren:
Alamo, Jesús A. del; Kim, Dae-Hyun; Kim, Dae-Hyun; Kim, Tae-Woo; Jin, Donghyun; Antoniadis, Dimitri A.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

53

III-V on Silicon for High-Speed Electronics and CMOS Photonics

Autoren:
Takenaka, Mitsuru; Takagi, Shinichi
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

54

Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTs

Autoren:
Saguatti, Davide; Isa, Muammar Mohamad; Ian, Ka Wa; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Missous, Mohamed
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

55

Improvement of modal gain of InAs/InP Quantum-Dash Lasers

Autoren:
Merghem, K.; Rosales, R.; Martinez, A.; Patriarche, G.; Ramdane, A.; Chimot, N.; Dijk, F. van; Moustapha-Rabault, Y.; Poingt, F.; Lelarge, F.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

56

In situ characterization of III-V/Si(100) anti-phase disorder

Autoren:
Doscher, Henning; Supplie, Oliver; Bruckner, Sebastian; Hannappel, Thomas
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

57

InAs/InGaAsP Quantum Dots Emitting at 1.5 µm for Applications in Lasers

Autoren:
Semenova, E. S.; Kulkova, I. V.; Kadkhodazadeh, S.; Kadkhodazadeh, S.; Schubert, M.; Dunin-Borkowski, R. E.; Yvind, K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

58

Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs

Autoren:
Scavennec, André; Maher, Hassan; Decobert, Jean
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

59

InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD

Autoren:
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials

60

InGaAs/InP DHBTs demonstrating simultaneous ftau/fmax ~ 460/850 GHz in a refractory emitter process

Autoren:
Jain, Vibhor; Lobisser, Evan; Baraskar, Ashish; Thibeault, Brian J.; Rodwell, Mark J. W.; Urteaga, M.; Loubychev, D.; Snyder, A.; Wu, Y.; Fastenau, J. M.; Liu, W. K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials