41
High Performance Submicron RTD Design for mm-Wave Oscillator Applications
Autoren:
Kamgaing, A. Tchegho; Muenstermann, B.; Geitmann, R.; Benner, O.; Blekker, K.; Prost, W.; Tegude, F. J.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
42
High quality photonic crystal waveguide filters based on mode-gap effect
Autoren:
Shahid, Naeem; Naureen, Shagufta; Li, Mingyu; Swillo, Marcin; Anand, Srinivasan
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
43
High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked Lasers
Autoren:
Rosales, R.; Merghem, K.; Martinez, A.; Accard, A.; Lelarge, F.; Ramdane, A.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
44
High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor
Autoren:
Yatskiv, R.; Grym, J.; Zdansky, K.; Piksova, K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
45
High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector Interface
Autoren:
Wang, H.; Mao, S.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
46
High-speed and high-power InGaAs/InP photodiode
Autoren:
Yang, Hua; Daunt, Chris; Daunt, Chris; Lee, Kohsin; Han, Wei; Gity, Farzan; Corbett, Brian; Peters, Frank H.; Peters, Frank H.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
47
High-Speed and Low-Power Static Frequency Divider and Decision Circuit with 0.5-?m-emitter-width InP HBTs
Autoren:
Bouvier, Y.; Nagatani, M.; Sano, K.; Murata, K.; Kurishima, K.; Ida, M.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
48
High-speed directly-modulated lasers with photon-photon resonance
Autoren:
Dumitrescu, M.; Telkkälä, J.; Karinen, J.; Viheriälä, J.; Laakso, A.; Afzal, S.; Reithmaier, J.-P.; Kamp, M.; Melanen, P.; Uusimaa, P.; Greadye, D.; Eisenstein, G.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
49
High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic Operation
Autoren:
Endoh, Akira; Endoh, Akira; Watanabe, Issei; Mimura, Takashi; Mimura, Takashi; Matsui, Toshiaki
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
50
High-yield Manufacturing of InP Dual-Port Coherent Receiver Photonic Integrated Circuits for 100G PDM-QPSK Application
Autoren:
Hu, Ting-Chen; Weimann, N.; Houtsma, V.; Kopf, R.; Tate, A.; Frackoviak, J.; Reyes, R.; Chen, Y. K.; Achouche, M.; Lelarge, F.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
51
Hybrid Photonic Integration of InP-Based Laser Diodes and Polymer PLCs
Autoren:
Soares, F. M.; Zhang, Z.; Przyrembel, G.; Lauermann, M.; Moehrle, M.; Zawadzki, C.; Zittermann, B.; Keil, N.; Grote, N.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
52
III-V CMOS: What have we learned from HEMTs?
Autoren:
Alamo, Jesús A. del; Kim, Dae-Hyun; Kim, Dae-Hyun; Kim, Tae-Woo; Jin, Donghyun; Antoniadis, Dimitri A.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
53
III-V on Silicon for High-Speed Electronics and CMOS Photonics
Autoren:
Takenaka, Mitsuru; Takagi, Shinichi
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
54
Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTs
Autoren:
Saguatti, Davide; Isa, Muammar Mohamad; Ian, Ka Wa; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Missous, Mohamed
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
55
Improvement of modal gain of InAs/InP Quantum-Dash Lasers
Autoren:
Merghem, K.; Rosales, R.; Martinez, A.; Patriarche, G.; Ramdane, A.; Chimot, N.; Dijk, F. van; Moustapha-Rabault, Y.; Poingt, F.; Lelarge, F.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
56
In situ characterization of III-V/Si(100) anti-phase disorder
Autoren:
Doscher, Henning; Supplie, Oliver; Bruckner, Sebastian; Hannappel, Thomas
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
57
InAs/InGaAsP Quantum Dots Emitting at 1.5 µm for Applications in Lasers
Autoren:
Semenova, E. S.; Kulkova, I. V.; Kadkhodazadeh, S.; Kadkhodazadeh, S.; Schubert, M.; Dunin-Borkowski, R. E.; Yvind, K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
58
Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs
Autoren:
Scavennec, André; Maher, Hassan; Decobert, Jean
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
59
InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD
Autoren:
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
60
InGaAs/InP DHBTs demonstrating simultaneous ftau/fmax ~ 460/850 GHz in a refractory emitter process
Autoren:
Jain, Vibhor; Lobisser, Evan; Baraskar, Ashish; Thibeault, Brian J.; Rodwell, Mark J. W.; Urteaga, M.; Loubychev, D.; Snyder, A.; Wu, Y.; Fastenau, J. M.; Liu, W. K.
Konferenz:
IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials